Samsung and Toshiba have announced plans to push for a new NAND flash memory specification meant to significantly speed up transfer rates. Specifically, the two companies committed themselves to develop toggle-mode DDR 2.0 NAND flash memory with a 400Mb/s interface, which is speedier than the 133Mb/s on current DDR 1.0 memory and ten times faster than the 40Mbps interface found on traditional single data rate (SDR) NAND flash chips.
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